XCuVZ 等原子四元Heusler化合物的磁性与霍尔输运的重点在于把前置条件、操作顺序和容易误判的地方分清楚。

{"type":"doc","content":[{"type":"heading","attrs":{"id":"b68c329e-1eb4-4631-8c9c-4ff98de8365d","textAlign":"inherit","indent":0,"level":1,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"XCuVZ 等原子四元Heusler化合物的磁性与霍尔输运"}]},{"type":"paragraph","attrs":{"id":"95de9807-de3a-42aa-88b0-4bd5542f18b9","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"PHYSICA B: CONDENSED MATTER 2026"}]},{"type":"paragraph","attrs":{"id":"c4332b7f-7779-41ab-be41-1345b42e842f","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"XCuVZ 等原子四元Heusler化合物的磁性与霍尔输运"}]},{"type":"paragraph","attrs":{"id":"b277d190-2698-4c30-b912-05bf623d8cd8","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"First-Principles Investigation of Magnetic and Hall Transport Phenomena in XCuVZ (X = Fe, Co, Ni; Z = Al, Sn, Sb)"}]},{"type":"paragraph","attrs":{"id":"39880c03-e882-41eb-9016-2bd706b43378","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"导读 导读：通过第一性原理计算系统研究了XCuVZ等原子四元Heusler化合物的结构、磁性和霍尔输运性质。三种原子排列（Type I/II/III）展现出丰富的磁性基态——铁磁、反铁磁、亚铁磁、半金属和非磁相。CoCuVSb（Type II）接近半金属性，Type III FeCuVIn的霍尔电流极化率高达5479%。该工作为通过结构工程定制自旋电子学材料提供了重要指导。"}]},{"type":"image","attrs":{"id":"5f4540e9-447e-47b2-b70d-d1c0dd581730","src":"https://developer.qcloudimg.com/http-save/audit-12559234/64df4664b7c987b3ab03a5a951ae8bd0.webp","extension":"","align":"center","alt":"","showAlt":false,"href":"","boxShadow":"","width":"","aspectRatio":0,"status":"success","showText":true,"isPercentage":false,"percentage":0,"isHoverDragHandle":false}},{"type":"paragraph","attrs":{"id":"6f755aca-b1cf-40d5-9c13-d564102f6103","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"一、前言背景"}]},{"type":"paragraph","attrs":{"id":"75f538a2-4fe5-4845-a79a-871f7d60dd41","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"Heusler合金：自旋电子学的多功能平台"}]},{"type":"paragraph","attrs":{"id":"b34d971e-8e96-4419-b8f5-198780a3fb26","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"• Heusler合金是一类庞大的金属间化合物家族，自1903年发现Cu₂MnSn以来，已有数千种Heusler相被报道"}]},{"type":"paragraph","attrs":{"id":"060783a6-3703-4d73-9a19-792b46976a74","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"• 功能多样性：半金属性、铁磁/亚铁磁性、形状记忆效应、高居里温度、可调拓扑态"}]},{"type":"paragraph","attrs":{"id":"a6b8de71-ed49-4abd-b11f-17c4a3e10431","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"• 等原子四元Heusler（EQH）化合物MXYZ：四个晶体学位点各被不同元素占据，形成LiMgPdSn型（F-43m）结构"}]},{"type":"paragraph","attrs":{"id":"f16f3047-32fd-43b1-9906-0c68ef2a4a2e","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"• 三种结构变体：Type I、Type II、Type III——原子排列方式深刻影响磁性和输运性质"}]},{"type":"paragraph","attrs":{"id":"87c25db2-6e91-4aa5-ace4-b1610a48bba7","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"• 半金属材料：一个自旋通道金属性，另一通道半导体性 → 100%自旋极化传导电子"}]},{"type":"paragraph","attrs":{"id":"fd28b4a5-66dc-4ba8-8180-11dc0c538853","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"XCuVZ体系：磁性、拓扑与霍尔输运的交汇"}]},{"type":"paragraph","attrs":{"id":"e679741d-085d-4f26-8f85-5e6bcf1e68a2","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"• 研究范围：X = Fe, Co, Ni（3d过渡金属）；Z = In, Sn, Sb（sp主族元素）"}]},{"type":"paragraph","attrs":{"id":"b05073ff-7d90-4578-8cbf-aaac05b0f391","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"• Fe/Co在X位提供强磁矩，Ni提供弱自旋极化，V常携带负自旋矩促进自旋补偿"}]},{"type":"paragraph","attrs":{"id":"b0bbcd46-029c-41ff-a3cc-afc2b0c01590","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"• Cu的闭壳层电子构型使其磁矩可忽略，充当非磁性间隔"}]},{"type":"paragraph","attrs":{"id":"1f90fe2d-27a7-4d90-bea8-aac000f709a9","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"• 核心目标：揭示原子有序和化学取代如何协同调控磁性基态、反常霍尔电导率（AHC）和自旋霍尔电导率（SHC）"}]},{"type":"paragraph","attrs":{"id":"f22b0005-795f-45bf-8ba4-5535287fad31","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"• 应用前景：半金属性 大AHC/SHC → 自旋注入、磁传感、自旋扭矩器件"}]},{"type":"paragraph","attrs":{"id":"f574ff85-1346-4a9e-9624-df00ec776e27","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"反常霍尔效应与自旋霍尔效应的物理基础"}]},{"type":"paragraph","attrs":{"id":"d627294f-3989-4d5c-881d-dc563ed728f6","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"• 内禀AHE：自旋-轨道耦合使自旋向上/向下电子获得相反的反常速度 → 铁磁体中净横向自旋极化电流"}]},{"type":"paragraph","attrs":{"id":"62f9518b-b750-4b3f-9615-277ea09a4218","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"• 内禀SHE：非磁体系中相等自旋布居下，反常速度产生纯自旋流——无耗散"}]},{"type":"paragraph","attrs":{"id":"f7b26e39-b81f-4882-8c31-38a398dfd8da","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"• 霍尔电流极化率P_H可超过100%（±∞），因为自旋分辨霍尔电流可反向流动"}]},{"type":"paragraph","attrs":{"id":"da598a72-7f1b-4bab-b8cb-f1423760813a","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"• 自旋-电荷转换效率 η = |(2e/ħ)I_S/I_C|：纯自旋流η=1，纵向电流η=0~1"}]},{"type":"paragraph","attrs":{"id":"ce830d93-a837-4052-907a-efbd61320036","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"• Wannier插值方法：克服直接k点采样的计算瓶颈，实现160×160×160密集网格"}]},{"type":"paragraph","attrs":{"id":"d9840473-a7af-4fc2-b430-d07e59241185","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"二、研究方法"}]},{"type":"paragraph","attrs":{"id":"0a89ea88-7a52-4f65-9b45-f6381dc7c175","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"第一性原理计算框架"}]},{"type":"paragraph","attrs":{"id":"81cdc86f-fb12-4e08-bdf9-d6d447c3cfa9","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"• DFT计算：VASP，PBE-GGA泛函，平面波截断能350 eV"}]},{"type":"paragraph","attrs":{"id":"e60f43f1-6a91-4639-b055-b2f4519eb59f","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"• k点采样：Γ中心12×12×12 Monkhorst-Pack网格"}]},{"type":"paragraph","attrs":{"id":"bebddcaf-9ef1-4155-b7a6-f7f9c08fc0f6","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"• 收敛判据：总能收敛至1.0×10⁻⁶ eV；结构优化至Hellmann-Feynman力<0.01 eV/Å"}]},{"type":"paragraph","attrs":{"id":"c41bcc0c-187d-4b28-80ce-9693ca8f936b","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"• 形成能：E_f = E_tot − (E_bulk_X E_bulk_Cu E_bulk_V E_bulk_Z)"}]},{"type":"paragraph","attrs":{"id":"9ec220b9-60b9-43f8-bf5e-c496452dfc1f","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"• 内聚能：E_coh = ΣE_atom − E_tot，用于评估合金稳定性"}]},{"type":"paragraph","attrs":{"id":"649bc1c7-49c0-406a-bf29-59c0b58ac4c0","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"• AFM态：2×2×2超胞（4个公式单元），X或V原子层内铁磁排列、层间反铁磁排列"}]},{"type":"paragraph","attrs":{"id":"86cd3070-2664-46bf-8f2b-6a4e77114048","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"Wannier插值与霍尔电导率计算"}]},{"type":"paragraph","attrs":{"id":"1927e56b-af75-4daa-bb61-3c025b532708","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"• Wannier90包：通过Bloch波函数的幺正变换构建最大局域化Wannier函数"}]},{"type":"paragraph","attrs":{"id":"9d4571b8-3f84-45b5-8f4b-16307e6d6a86","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"• 插值优势：对能带能量和矩阵元素进行高精度插值，不受紧束缚模型有限基组限制"}]},{"type":"paragraph","attrs":{"id":"8b236aba-637b-4468-9986-a95df98ea2cf","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"• AHC：Berry曲率在160×160×160密集k网格上的积分，另加5×5×5自适应细化网格"}]},{"type":"paragraph","attrs":{"id":"d02a51b9-ca15-4445-a655-2eea2b228a4c","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"• 自旋分解：σ_H↑_xy和σ_H↓_xy由SHC和AHC通过线性方程组解出"}]},{"type":"paragraph","attrs":{"id":"bbe71798-c897-4151-8e2f-5fe1cefaa070","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"• 注意：自旋向上/向下分解仅对轻元素金属严格成立（SOC混合自旋翻转分量小）"}]},{"type":"image","attrs":{"id":"2e31b6d0-e2d3-4987-9d0b-705f349662ea","src":"https://developer.qcloudimg.com/http-save/audit-12559234/28c80b91bd13b5d974e05ced175f63fd.webp","extension":"","align":"center","alt":"","showAlt":false,"href":"","boxShadow":"","width":"","aspectRatio":0,"status":"success","showText":true,"isPercentage":false,"percentage":0,"isHoverDragHandle":false}},{"type":"paragraph","attrs":{"id":"ca11622f-1b43-4a29-993c-61d2f8306680","textAlign":"center","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"形成能定义——评估合金的相对稳定性"}]},{"type":"image","attrs":{"id":"9a72dfc0-50ef-4a72-96e5-1263be33ebd4","src":"https://developer.qcloudimg.com/http-save/audit-12559234/62c4c038f108aef0b5742f2b1c5bc325.webp","extension":"","align":"center","alt":"","showAlt":false,"href":"","boxShadow":"","width":"","aspectRatio":0,"status":"success","showText":true,"isPercentage":false,"percentage":0,"isHoverDragHandle":false}},{"type":"paragraph","attrs":{"id":"ab601638-99b2-4e7f-9af5-6b772a575c15","textAlign":"center","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"内禀反常霍尔电导率的Kubo公式——Berry曲率Ω_z(k)在Brillouin区的积分"}]},{"type":"image","attrs":{"id":"e2326a60-3fa2-462d-9b4f-acb83d575a95","src":"https://developer.qcloudimg.com/http-save/audit-12559234/5c6000c11a33ed6ef8dbc58273843b2b.webp","extension":"","align":"center","alt":"","showAlt":false,"href":"","boxShadow":"","width":"","aspectRatio":0,"status":"success","showText":true,"isPercentage":false,"percentage":0,"isHoverDragHandle":false}},{"type":"paragraph","attrs":{"id":"38eb9e04-8747-49b9-b256-7c02de3a0bbc","textAlign":"center","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"霍尔电流自旋极化率，P_H可超过±100%"}]},{"type":"image","attrs":{"id":"d892f453-cdd8-4495-93f0-0dfe9340554f","src":"https://developer.qcloudimg.com/http-save/audit-12559234/4496cd8c4f5aabc5b8c362ecec65b8f1.webp","extension":"","align":"center","alt":"","showAlt":false,"href":"","boxShadow":"","width":"","aspectRatio":0,"status":"success","showText":true,"isPercentage":false,"percentage":0,"isHoverDragHandle":false}},{"type":"paragraph","attrs":{"id":"25691311-90e3-4e0a-b6f6-ce10306c7619","textAlign":"center","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"态密度自旋极化率，半金属材料P_D=±1"}]},{"type":"paragraph","attrs":{"id":"68569182-17be-43be-8273-9ca00e0988f3","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"三、三种结构类型的磁性基态"}]},{"type":"image","attrs":{"id":"f186c600-8c9f-424b-bb5e-a8732b25998a","src":"https://developer.qcloudimg.com/http-save/audit-12559234/c9ec3a1eaccd8a1c43059eabbdd93158.webp","extension":"","align":"center","alt":"","showAlt":false,"href":"","boxShadow":"","width":"","aspectRatio":0,"status":"success","showText":true,"isPercentage":false,"percentage":0,"isHoverDragHandle":false}},{"type":"paragraph","attrs":{"id":"ea801d5e-14bc-47c2-a023-3dbe87de966d","textAlign":"center","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"图1 | XCuVZ EQH化合物的三种晶体结构。(a) Type I、(b) Type II、(c) Type III原子排列。X（蓝色）、Cu（棕色）、V（红色）、Z（粉色）。不同原子排列深刻影响磁性和输运性质。"}]},{"type":"paragraph","attrs":{"id":"67e0c903-fb67-4e97-8ce0-f2be6eaf6bbf","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"Type I结构：FM/AFM共存"}]},{"type":"paragraph","attrs":{"id":"698d438c-c486-4baf-879f-2dd42aa384d9","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"• Type I中Fe/Co占据X位：常稳定AFM或FM基态，取决于Z元素"}]},{"type":"paragraph","attrs":{"id":"b32a1801-cb20-4c99-9838-013d58c9cf1d","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"• FeCuVIn（Type I）：AFM基态，Fe磁矩2.520 μ_B，V负磁矩−1.685 μ_B"}]},{"type":"paragraph","attrs":{"id":"15cbcbef-43fb-4092-ba38-26f59640644d","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"• CoCuVSb（Type I）：FM基态，总磁矩2.442 μ_B，V贡献1.803 μ_B（主导）"}]},{"type":"paragraph","attrs":{"id":"10ca3987-b0f1-4f2b-8123-605fc02e7714","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"• NiCuVIn（Type I）：少数NM基态化合物——Ni弱极化<0.5 μ_B"}]},{"type":"paragraph","attrs":{"id":"ba4a16e8-c64b-49aa-a966-a64014e3eaac","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"• 磁化能ΔE = E_FM,AFM − E_NM：大多数化合物显著偏磁有序态"}]},{"type":"paragraph","attrs":{"id":"b3526843-8d6e-4697-b9c7-9958f57030a6","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"Type II结构：半金属性的出现"}]},{"type":"paragraph","attrs":{"id":"c1e802d5-44c1-4d94-a6da-ba9a02d4ec8d","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"• Type II展示最丰富的磁性行为：AFM、FiM、FM、NM、HM"}]},{"type":"paragraph","attrs":{"id":"d9bcbc98-d937-4e85-a99b-65aaef575d45","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"• CoCuVSb（Type II）：接近半金属，整数总磁矩2.000 μ_B，自旋向下DOS在费米面处被抑制"}]},{"type":"paragraph","attrs":{"id":"e3b046a2-6464-40e0-a230-f6c4c8032711","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"• 间接自旋向下带隙约0.4 eV——半金属性的标志"}]},{"type":"paragraph","attrs":{"id":"b1c0dbda-1f19-4554-a055-49694749d002","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"• FeCuVSn（Type II）：AFM基态，Fe和V磁矩几乎完全补偿"}]},{"type":"paragraph","attrs":{"id":"1143f165-ddf7-489f-8db4-66240506d601","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"• CoCuVIn（Type II）：NM基态——Co和V的磁矩充分淬灭"}]},{"type":"paragraph","attrs":{"id":"6a5b15be-3a19-4440-b5cc-4dc2f2d79b68","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"Type III结构：弱磁性与FiM稳定性"}]},{"type":"paragraph","attrs":{"id":"ce5003d8-22bc-4d9b-959f-950db06c35ce","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"• Type III整体磁化较弱，倾向于AFM或FiM稳定性"}]},{"type":"paragraph","attrs":{"id":"3534d22d-7124-4938-b1b1-f33d264d7e73","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"• FeCuVZ（Type III）：AFM基态，Fe大正磁矩 V大负磁矩 → 自旋补偿，总磁矩接近零"}]},{"type":"paragraph","attrs":{"id":"78c3bd6d-e0d7-4487-9870-8b7fb6d7c752","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"• 例如FeCuVSn（Type III）：总磁矩仅0.560 μ_B，Fe=2.483 μ_B，V=−1.697 μ_B"}]},{"type":"paragraph","attrs":{"id":"8078f535-b9e2-4e63-a9a7-077ce417b83d","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"• CoCuVZ（Type III）：FiM基态，磁矩从CoCuVIn的0.062 μ_B到CoCuVSn的0.118 μ_B"}]},{"type":"paragraph","attrs":{"id":"6501cba5-1046-4f72-b13b-7f91f35220bd","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"• 关键结论：原子有序和化学取代可定制FM/FiM/AFM/NM基态"}]},{"type":"image","attrs":{"id":"424eb85f-a986-4087-833d-1ded4b6aa261","src":"https://developer.qcloudimg.com/http-save/audit-12559234/057c85e58dce0de8c6e25957b5cb63ee.webp","extension":"","align":"center","alt":"","showAlt":false,"href":"","boxShadow":"","width":"","aspectRatio":0,"status":"success","showText":true,"isPercentage":false,"percentage":0,"isHoverDragHandle":false}},{"type":"paragraph","attrs":{"id":"553ddf17-9c31-4f3f-a110-c3bb23e1baf4","textAlign":"center","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"图2 | CoCuVSb三种原子有序下的自旋分辨电子能带结构（左）和态密度（右）。Type I（上）：正常磁性金属；Type II（中）：接近半金属，自旋向下带隙~0.4 eV；Type III（下）：弱流动铁磁性。"}]},{"type":"paragraph","attrs":{"id":"279ed125-0679-46c6-8d93-f85530ff00b4","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"四、反常霍尔与自旋霍尔效应"}]},{"type":"image","attrs":{"id":"c8e18f31-ac14-4aa7-a7b0-3d43180db1ce","src":"https://developer.qcloudimg.com/http-save/audit-12559234/90fbe07734762879ed2a6552cabbf8c4.webp","extension":"","align":"center","alt":"","showAlt":false,"href":"","boxShadow":"","width":"","aspectRatio":0,"status":"success","showText":true,"isPercentage":false,"percentage":0,"isHoverDragHandle":false}},{"type":"paragraph","attrs":{"id":"e1b581d0-3f8d-483d-8f15-612a21719367","textAlign":"center","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"图4 | Type III FeCuVSb的电子能带结构与Berry曲率。(a) Berry曲率投影到能带上（色标：−2.0到2.0），下方为Ω_z(k)沿高对称路径。(b) 细化色标（−0.75到0.75）揭示更精细的Berry曲率特征。"}]},{"type":"paragraph","attrs":{"id":"19e2cc27-2a86-4629-b940-b7fbf1b629a1","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"AHC与SHC的关键发现"}]},{"type":"paragraph","attrs":{"id":"dc9b0134-bdc4-4132-aebd-5227e01e5017","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"• CoCuVZ化合物持续展示较高AHC，特别是Z=Sb或Sn时——重p区元素通过更强SOC增强Berry曲率"}]},{"type":"paragraph","attrs":{"id":"6a9848ec-8082-4722-9d33-28eaae38fe4f","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"• NiCuVZ化合物AHC显著降低——反映其较小的磁矩和减弱的交换劈裂"}]},{"type":"paragraph","attrs":{"id":"87696e8e-4973-4cfb-8fa3-14c3083b18d7","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"• Type I FeCuVIn：AHC=−637.48 S/cm，SHC=−238.46 ℏ/e·S/cm"}]},{"type":"paragraph","attrs":{"id":"f76a7ec1-648c-4e13-84e1-5444dc65617b","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"• Type I NiCuVSn：AHC=−628.99 S/cm，SHC=262.38 ℏ/e·S/cm"}]},{"type":"paragraph","attrs":{"id":"8d6df419-6017-4287-a37e-ddf5a2754f6b","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"• Type III CoCuVSb：AHC=482.47 S/cm（最大正AHC之一）"}]},{"type":"paragraph","attrs":{"id":"13f1f1c1-f6e3-4bbe-b0cb-6686bd05f4f3","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"• 结构敏感性：同组分不同原子排列的AHC差异巨大（如FeCuVIn：Type I −637 vs Type III −8.7 S/cm）"}]},{"type":"paragraph","attrs":{"id":"341b9a2e-1586-4401-8a57-6b9a83ee19f7","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"霍尔电流自旋极化率：极端值"}]},{"type":"paragraph","attrs":{"id":"8050e5fc-e103-449e-9565-b761341fde5a","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"• Type II CoCuVSb（半金属）：P_H=−99.4%，η=0.99 → 几乎纯自旋霍尔电流"}]},{"type":"paragraph","attrs":{"id":"668e7c46-ddb6-48d5-bf74-30d9d0cffd0d","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"• Type III FeCuVIn：P_H=5479.1%，η=54.79 → 巨大的霍尔电流极化率"}]},{"type":"paragraph","attrs":{"id":"b5210d2e-d944-43fc-b315-4fa2509a4d1a","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"• Type I CoCuVIn：P_H=1500.1%，η=15.00"}]},{"type":"paragraph","attrs":{"id":"ad4816c4-1fff-4d3b-bce1-00ff17f06aa3","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"• 含In化合物普遍展示极大P_H值（>500%），与费米面附近特殊电子结构有关"}]},{"type":"paragraph","attrs":{"id":"4dfb821b-d916-4cf7-a9df-2ced00025057","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"• Co基化合物中η常略大于1 → 霍尔电荷电流可作为高效自旋电流源"}]},{"type":"paragraph","attrs":{"id":"0edfa0c7-c448-4715-bf42-9f1d35c58c9a","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"Berry曲率分布的结构敏感性"}]},{"type":"paragraph","attrs":{"id":"063bb38c-7072-4e67-a7e8-74a227845f72","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"• Type I FeCuVIn：Berry曲率由大且同号贡献主导 → 建设性叠加 → 大AHC"}]},{"type":"paragraph","attrs":{"id":"8d490632-f08f-43d9-a0b9-527000a36802","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"• Type III FeCuVIn：正负Berry曲率交替出现、量级相当 → 强烈抵消 → AHC被抑制"}]},{"type":"paragraph","attrs":{"id":"66f7387d-831b-41a7-a238-ec8c788454b9","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"• 根源：SOC诱导d_xz/d_yz或d_xy/d_x²−y²轨道混合 → 费米面位于t_2g流形中时最大化AHE/SHE"}]},{"type":"paragraph","attrs":{"id":"5c686c4a-eeeb-479a-bbd1-9e4630c4fa26","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"• 晶格对称性破缺和轨道杂化显著重塑Berry曲率轮廓 → 结构工程控制反常输运"}]},{"type":"image","attrs":{"id":"92cc24f6-c58a-4ca9-95cb-239e793e923f","src":"https://developer.qcloudimg.com/http-save/audit-12559234/59100b070d07626c7b2d25503589bea3.webp","extension":"","align":"center","alt":"","showAlt":false,"href":"","boxShadow":"","width":"","aspectRatio":0,"status":"success","showText":true,"isPercentage":false,"percentage":0,"isHoverDragHandle":false}},{"type":"paragraph","attrs":{"id":"06769f60-abf3-4030-992e-b7133eebb22b","textAlign":"center","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"SHC与AHC的线性关系——自旋分辨霍尔电导率σ_H↑_xy和σ_H↓_xy由SHC和AHC解出"}]},{"type":"image","attrs":{"id":"42658bad-cc7d-4e01-93f4-5b553845cf2b","src":"https://developer.qcloudimg.com/http-save/audit-12559234/d786a92e0553c83034cd2869ae726591.webp","extension":"","align":"center","alt":"","showAlt":false,"href":"","boxShadow":"","width":"","aspectRatio":0,"status":"success","showText":true,"isPercentage":false,"percentage":0,"isHoverDragHandle":false}},{"type":"paragraph","attrs":{"id":"7c053eb8-21f9-44d2-83c3-723bd46c3977","textAlign":"center","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"图5 | XCuVZ Heusler合金的声子谱。(a) Type I NiCuVSb、(b) Type III FeCuVIn、(c) Type III FeCuVSn。无虚频模式证实动力学稳定性。"}]},{"type":"paragraph","attrs":{"id":"60c6943f-705d-4813-a078-a8b77378055a","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"五、稳定性与实验可行性"}]},{"type":"paragraph","attrs":{"id":"b57198f5-c374-4919-bba6-811e5b48439c","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"力学与动力学稳定性分析"}]},{"type":"paragraph","attrs":{"id":"1432b921-347c-440f-80ee-3335096ec1e0","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"• 力学稳定性判据C₁₁>C₁₂：仅Type I CoCuVSn/CoCuVSb/NiCuVSn/NiCuVSb等满足"}]},{"type":"paragraph","attrs":{"id":"6c87586c-3fb4-4264-b0f5-4c208583e398","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"• DFPT声子谱：Type I NiCuVSb、Type III FeCuVIn、FeCuVSn无虚频 → 动力学稳定"}]},{"type":"paragraph","attrs":{"id":"823ba0cb-81f0-4c2d-83b2-a6c8c5d63b2b","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"• 立方结构的不稳定性在NiCoMnZ体系中也曾报道——外部稳定机制（应变工程、化学取代、外延生长）可能必要"}]},{"type":"paragraph","attrs":{"id":"333bb155-bf42-433f-bc84-773f401556b0","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"• 与高熵合金的类比：多元素增加构型无序 → 拓宽功能设计空间，但增加结构不稳定风险"}]},{"type":"paragraph","attrs":{"id":"9d3e2e01-6f91-4c4f-8d17-029677eb574f","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"• 理论预测的磁性和输运性质应理解为理想化结构的内禀趋势"}]},{"type":"paragraph","attrs":{"id":"6dc9f50d-45c3-416c-9c9e-27fc57be7761","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"六、总结"}]},{"type":"paragraph","attrs":{"id":"9edb89a5-05ee-42bf-9dec-16a9f536a65c","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"核心发现"}]},{"type":"paragraph","attrs":{"id":"e1a1afe6-a102-4ad8-abb1-113171ddef58","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"(1) XCuVZ EQH化合物的磁性和输运性质对原子有序和化学取代高度敏感"}]},{"type":"paragraph","attrs":{"id":"d1c2ba0e-8f8a-4d59-896b-22160996820e","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"(2) Type II CoCuVSb展现近半金属性（整数磁矩2.000 μ_B，自旋向下带隙~0.4 eV）→ 自旋电子学理想候选"}]},{"type":"paragraph","attrs":{"id":"012b7eb6-0a57-4609-93d6-b0d1a38dc501","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"(3) CoCuVZ系列持续展示较高AHC，重Z元素（Sb、Sn）通过增强SOC放大Berry曲率效应"}]},{"type":"paragraph","attrs":{"id":"0ef19f8d-2025-4ff1-bb6e-be7c8240431c","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"(4) 霍尔电流自旋极化率P_H可达极端值：Type III FeCuVIn的5479%，Type II CoCuVSb的−99.4%"}]},{"type":"paragraph","attrs":{"id":"4f5ab482-f610-4163-a3d1-7af2b56053fd","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"(5) Berry曲率轮廓对结构高度敏感：Type I建设性叠加 → 大AHC，Type III正负抵消 → AHC被抑制"}]},{"type":"paragraph","attrs":{"id":"b9184c22-5fca-46c5-8920-d7239abf8782","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"(6) 结构工程和化学取代为定制FM/FiM/AFM基态和自旋极化输运提供了多功能平台"}]},{"type":"paragraph","attrs":{"id":"08c68932-e6a2-4d2c-8285-096a392e72a5","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"参考文献"}]},{"type":"paragraph","attrs":{"id":"a24ee92e-4c02-4920-9c56-8de92379d2db","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"[1] Tung JC, Lee CH, Lee CH, Liu PL. Physica B 727, 418349 (2026) — 本工作"}]},{"type":"paragraph","attrs":{"id":"39253bde-598b-48a4-9d24-ee0a6fd8851f","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"[2] Graf T, Felser C, Parkin SSP. Prog. Solid State Chem. 39, 1 (2011) — Heusler综述"}]},{"type":"paragraph","attrs":{"id":"93e53630-98c3-4b7b-8e52-df1ff6d3c452","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"[3] Bainsla L, Suresh KG. Appl. Phys. Rev. 3, 031101 (2016) — EQH综述"}]},{"type":"paragraph","attrs":{"id":"8547e516-1d3e-42c0-88d0-e424dbe748b1","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"[4] Tung JC, Guo GY. New J. Phys. 15, 033014 (2013) — Co₂XZ AHC/SHC"}]},{"type":"paragraph","attrs":{"id":"c97a1bcd-0cc2-44cb-b656-38a2b3ea92c0","textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"[5] Wang X, Yates JR, Souza I, Vanderbilt D. Phys. Rev. B 74, 195118 (2006) — Wannier插值"}]},{"type":"paragraph","attrs":{"id":"9bfc4eff-5265-4111-8e07-d68e3e474ea9","textAlign":"center","indent":0,"color":null,"background":null,"isHoverDragHandle":false},"content":[{"type":"text","marks":[{"type":"textStyle","attrs":{"color":"","background":""}}],"text":"J.-C. Tung, C.-H. Lee, C.-H. Lee, P.-L. Liu | Physica B 727, 418349 (2026) | Heusler合金 · 自旋霍尔效应 · 反常霍尔效应 · 半金属"}]},{"type":"paragraph","attrs":{"id":null,"textAlign":"inherit","indent":0,"color":null,"background":null,"isHoverDragHandle":false}}]}","createTime":1785938730,"ext":{"closeTextLink":0,"comment_ban":0,"description":"","focusRead":0},"favNum":0,"html":"","isOriginal":0,"likeNum":0,